Optimization Design for 1.55 µm InAs/InGaAs quantum dot Square Microcavity Lasers on Silicon with Edge Midpoint Output Waveguide Structures

international conference on information photonics(2020)

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摘要
We demonstrate an optimized structure design and analyze the optical mode characteristics of 1.55 µm Si-based III-V square microcavity laser with InAs/InGaAs quantum-dot active region and directional midpoint output waveguide. © 2020 The Author(s)
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关键词
directional midpoint output waveguide,optimization design,edge midpoint output waveguide,optimized structure design,optical mode characteristics,Si-based III-V square microcavity laser,size 1.55 mum,wavelength 1.55 mum,InAs-InGaAs-Si
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