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Spectroscopic studies on InGaBiAs/InP semiconductors for mid-infrared applications

G. M. T. Chai,Suhana Mohamed Sultan,Joshua M. O. Zide,Igor P. Marko,Stephen J. Sweeney,T. J. C. Hosea

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) (2019), paper OTh3C.4（2019）

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Abstract
The bandgap and the spin orbit splitting of InGaAsBi/InP is presented with respect to Bi concentrations. At 5% Bi, ΔSO>Eg. We’ve found that In0.53Ga0.47As0.942Bi0.058/InP is the first sample with ΔSO>Eg from 20 to 300 K.
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ingabias/inp semiconductors,spectroscopic studies,mid-infrared
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