Tunable Metasurface based on Silicon Doped Indium Oxide

OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED) (2019), paper NoTh3B.6(2019)

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摘要
A tunable metasurface based on silicon doped indium oxide has been investigated. The amplitude of reflected light was actively tuned with a gate bias demonstrating 57% reflectance change and 366 nm of resonance wavelength shift.
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关键词
tunable metasurface,silicon doped indium oxide
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