Improvement of GaN Epitaxial Layer and AlGaN/GaN HEMTs by Patterned Sapphire Substrate Technology

Chen-Che Lee, Hsin-Jung Lee,Chien-Tsun Chan,Chieh-Hsiung Kuan

conference on lasers and electro optics（2021）

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摘要

A microstructure was designed to reduce the dislocations in the epitaxial GaN layer and improve electrical characteristics of HEMTs by using the patterned sapphire substrates technology. AlGaN/GaN HEMTs with the maximum drain current density increased from 308 mA/mm to 469 mA/mm were achieved.

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关键词

GaN epitaxial layer,patterned sapphire substrate technology,microstructure,dislocations,electrical characteristics,drain current density,AlGaN-GaN HEMT,AlGaN-GaN

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