Plasmonic FETs for THz detection applications

In the last few years, there has been significant advance in the design and modeling of plasmonic terahertz semiconductor devices for applications in detection, generation and modulation of high frequency signals. Plasmonic Terahertz field effect transistors (TeraFET) have been implemented in silicon, InGaAs, GaN], and graphene. Recently, the p-diamond plasmonic TeraFET has been proposed and demonstrated to be a promising candidate for THz and sub-THz applications. To explore more features of TeraFETs, we simulated the response using the hydrodynamic model under various incoming signal conditions, for Si, GaN, InGaAs, and p-diamond FETs. Under the small-signal detection mode, the p-diamond TeraFET has a higher detection sensitivity compared to other TeraFETs. When a strong signal is received, a shock wave develops along the channel. The measurements of the pulse response time could enable the parameter extraction of TeraFET materials.