High-performance As/P MOCVD platform for emerging photonics applications (Conference Presentation)

We’ve developed a next-generation MOCVD platform for high-performance, commercial VCSEL production. The tool is capable of achieving total population uniformity >95% yield in +/- 3nm bin on 6” GaAs. In addition, the tool is capable to go >300 runs between maintenance while maintaining very fast growth rate up to 4.2micron / hr and low [C] impurity 2 micron size have been demonstrated. Correlation of epi and VCSEL device parameters such as threshold current density (Jth) and power conversion efficiency will be discussed.