The origin of ultra-low thermal conductivity of the Bi2Te2S compound and boosting the thermoelectric performance via carrier engineering

In this study, a series of Bi2Te2-xS1+x compounds were prepared by traditional melting-quenching-annealing process. In the range of 0.03 ≤ x ≤ 0.25, Bi2Te2-xS1+x compounds possess the Bi2Te3 structure. S atoms preferentially fully occupy the Te(2) sites, while any extra S atoms randomly occupy the Te(1) sites. Experimental results and phonon dispersion calculations demonstrate that the strong coupling of the phonon density of state contributed by Bi and Te(1) atoms results in the low avoided-crossing frequencies, sound velocities, Debye temperature and therefore the low lattice thermal conductivities. Moreover, substitutions of extra S atoms on the Te(1) site intensifies alloy phonon scattering that further suppresses the lattice thermal conductivity. An ultra-low lattice thermal conductivity of 0.49 W m−1 K−1 is achieved at 523 K. Doping with Cl increases the room temperature carrier concentration, resulting in a significantly enhanced power factor from 1.5 mW m−1 K−2 for the Bi2Te1.93S1.07 sample to 1.7 mW m−1 K−2 for the Cl-doped sample at 323 K. Furthermore, doping with Cl enhances phonon point defect scattering that leads to a suppression of the thermal conductivity to 0.41 W m−1 K−1 at 573 K. As a result of the optimization of the electronic transport properties and the reduction in the lattice thermal conductivity, Bi2Te1.93S1.065Cl0.005 sample achieved the highest ZT of 0.67 at 623 K which is superior to intrinsic Bi2Te3 in the whole temperature range.