Novel technology of III-V die-bonded SOI photonic integrated circuits
Emerging Applications in Silicon Photonics II(2021)
摘要
In the frame of the H2020 PICTURE project, we designed and developed densely integrated photonic devices and transceiver (TRx) circuits for high bit-rate telecom and datacom applications. We implemented a process with four different InP-based dies bonded on SOI wafers. With one sole back-end processing run, we achieved the fabrication of multiple components of the complex TRx circuits, and many building block devices, such as III-V/Si SOAs & Fabry-Perot lasers, photodiodes or fast tunable capacitive DFB lasers. First testing of these devices shows promising results. 13dBm-saturation power SOAs and less than 2ns-tuning time capacitive DFB lasers were fabricated and demonstrated.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要