Influence of piezoelectricity, doping and magnetostatic field on Brillouin amplification in compound (AIIIBV and AIIBVI) semiconductors

A theoretical formulation followed by numerical analysis describing Brillouin amplification in compound (A III B V and A II B VI ) semiconductors is explored. The threshold condition for the onset of Brillouin amplification is determined. Well above the threshold intensity, the influence of piezoelectricity, doping concentration, and external magnetostatic field on the parameters characterizing Brillouin amplification viz. Brillouin amplification coefficient, transmitted intensity of Brillouin-scattered Stokes mode (BSSM), and Brillouin cell efficiency of the Brillouin cell isestimated. Numerical analysis is made for three different Brillouin cells consisting of [Formula: see text]-InSb, [Formula: see text]-GaAs, and [Formula: see text]-CdS, at 77[Formula: see text]K duly irradiated by a pulsed CO 2 laser. Efforts are directed towards to determine appropriate values of doping concentration and magnetostatic field to enhance the parameters characterizing Brillouin amplification, at lower excitation intensity, and to establish the suitability of compound semiconductors as hosts for fabrication of efficient Brillouin amplifiers.