A Design of V-band Reconfigurable SPDT Switch/Power Divider Based on Slotted SIW

2020 IEEE USNC-CNC-URSI North American Radio Science Meeting (Joint with AP-S Symposium)(2020)

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摘要
In this paper, a novel reconfigurable single-pole double-throw (SPDT) switch/power divider (PD) employing substrate-integrated waveguide (SIW) technology is presented for V-band applications. By controlling the dc-bias of PIN diodes, the proposed reconfigurable function can be achieved. Simulations show that, when functioned as a SPDT switch, the circuit exhibits an isolation of larger than 32 dB and an insertion loss of less than 1.4 dB from 58-62 GHz. On the other hand, a minimum insertion loss of 0.9 dB is calculated at 60 GHz when functioned as a 3-dB PD. The total area of the device is 3λ 0 × 2.36λ 0 .
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关键词
slotted SIW,substrate-integrated waveguide technology,reconfigurable function,reconfigurable single-pole double-throw switch-power divider,V-band reconfigurable SPDT switch-power divider,DC bias,insertion loss,frequency 58.0 GHz to 62.0 GHz,loss 0.9 dB
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