Performance of TIOHOS Device with stack gate for UV Total Dose Nonvolatile Sensor

A device with the layers of titanium nitride-indium tin oxide-silicon oxide-hafnium oxide-silicon oxide-silicon with a double gate of titanium nitride/indium-tin-oxide TiN/ITO (TIOHOS with TiN/ITO double gate) was applied to the total dose of UV radiation (UV TD) in a nonvolatile sensor. The threshold voltage V _T of the TIOHOS device increased after UV radiation, which has a relationship to UV TD. The TIOHOS with TiN/ITO double gate reduced the gate UV absorption coefficient more than TiN and the gate electric resistivity more than ITO. The TIOHOS device with TiN/ITO double gate successfully increased the performance of a nonvolatile UV TD sensor which is better than that of titanium nitride-silicon oxide-hafnium oxide-silicon oxide-silicon device TOHOS (with TiN gate) and indium tin oxide -silicon oxide-hafnium oxide-silicon oxide-silicon IOHOS (with ITO gate). To eliminate the UV TD information in the TIOHOS UV TD sensor and let the UV TD become a natural invalid state, positive charges were injected by applying a negative bias on the control gate (NBS). It is proved that the TIOHOS with TiN/ITO double gate was appropriate for nonvolatile UV TD radiation sensors.