22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C

This work studies the impact of increase in temperature on the RF and analog figures of merit (FoMs) of 22 nm FD-SOI MOSFETs from room temperature of $25^{\circ}C$ to $175^{\circ}C$. DC and RF measurements are performed on the MOSFETs to extract the main RF FoMs over temperature. From DC measurements in temperature, the zero-temperature coefficient (ZTC) point and threshold voltage (VTh...