Performance Comparison of V-band T/R Amplifier Module in SiGe Technology using Aluminium and Copper Back-end of line

Ahmed Gadallah,Mohamed H. Eissa,Dietmar Kissinger,Andrea Malignaggi

2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)（2022）

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摘要

This work presents the performance comparison of a V-band T/R amplifier module in a SiGe: C 130nm BiCMOS technology, featuring ft/fmax of 250/340 GHz, realized using two different back-end of lines, Aluminium and copper based. The T/R amplifier-module can be used for integrated/hybrid phased array systems and consists of two SPDT switches, PA in Tx path and LNA in Rx path. Me...

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关键词

Radio frequency,Phased arrays,Noise figure,Aluminum,Monolithic integrated circuits,BiCMOS integrated circuits,Silicon

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