N ox and Buried PN junctions effect on RF performance of High-Resistivity Silicon substrates

2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)(2022)

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摘要
In this paper, a substrate interface passivation solution based on high-resistivity (HR) substrates buried PN junctions with aggressive pitch is presented. C-V measurements, small- and large-signal simulations and measurements are reported. The HR+PN solution presented achieves effective resistivity values reaching 2 kΩ.cm with 0.1 dB/mm loss at 6 GHz. We report that this PN-passivated substrate p...
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关键词
Radio frequency,Wireless communication,Linearity,Silicon-on-insulator,Monolithic integrated circuits,Silicon,Junctions
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