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Research on the Influence of Bond Wire Lift-Off Position on the Electro-Thermal Characteristics of IGBT

Chunming Tu,Haoliang Xu,Biao Xiao,Jiwu Lu,Qi Guo,Liu Long

IEEE Transactions on Electron Devices（2022）

Cited 5|Views11
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Abstract
Based on the actual packaging structure of insulated gate bipolar transistor (IGBT) module, this article establishes the power loss model, and analyzes the influence of the position of the lift-off bond wire on the module. Through the theoretical analysis, it is found that the position of the lift-off bond wire is an important factor affecting the aging of the modules. And then the electrothermal ...
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Key words
Wires,Insulated gate bipolar transistors,Copper,Resistance,Junctions,Silicon,Equivalent circuits
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