An Empirical Compact Model for Ferroelectric Field-Effect Transistor Calibrated to Experimental Data

Ferroelectric field-effect transistors (FEFETs) are an important candidate for emerging nonvolatile memory applications but suffer from a lack of physical understanding of the device operation. Previous FEFET models utilized the Preisach model of ferroelectrics and do not accurately capture the physics of the FEFET that the majority of the polarization charge is screened by trapped charge at the i...