Cryogenic Characterization and Analysis of Nanoscale SOI FETs Using a Virtual Source Model

Guantong Zhou,Fahad Al Mamun,Jean Yang-Scharlotta,Dragica Vasileska,Ivan Sanchez Esqueda

IEEE Transactions on Electron Devices（2022）

引用 8|浏览8

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摘要

This article reports the temperature-dependent characterization and analysis of quasi-ballistic transport in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs) from a 22-nm commercial CMOS technology. Measurements of current–voltage ( ${I}$ – 更多

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关键词

Voltage measurement,MOSFET,Logic gates,Resistance,Nanoscale devices,Cryogenics,Current measurement

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