High-Performance Thin-Film Transistors and Inverters Based on ALD-Derived Ultrathin Al 2 O 3 -Passivated CeO 2 Bilayer Gate Dielectrics
IEEE Transactions on Electron Devices（2022）
Abstract
In this article, solution-derived amorphous cerium oxide (CeO2) with smooth surface as gate dielectric has been investigated. Electrical analysis has indicated that ALD-derived 3 nm Al2O3 passivation layer on CeO2 surface is benefit to reduce leakage current of CeO2 MOS capacitors. Meanwhile, solution-processed In2O3 thin...
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Key words
Dielectrics,Thin film transistors,Leakage currents,Cerium,Annealing,Logic gates,Inverters
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