Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials

This work reports that the composite channel InGaAs, InAs and InGaAs thin, with dual delta-doped double recessed gate (DG) MOSHEMT, is 40 nm gate length, the barrier 3 nm and 15 nm thick channel, and this structure has been simulated in the TCAD Sentaurus simulation tool. The DC and RF characteristics of proposed device are characterized by different gate lengths along with different VDS. The novel design features included under this proposed structure, namely recessed high stem gate, thin barrier, dual gate, composite channel and the HfO2 as a dielectric material, are applicable for low leakage current along with Tera Hertz frequency applications. The simulation results show the exhibition of a high drain current of 1.38 × 10−3 A/µm, transconductance of 3.35 × 10−3 S/µm, threshold voltage of 0.13 V, cutoff and maximum frequency of oscillation of 791 and 995 GHz by the DGMOSHEMT devices at LG = 40 nm and VDS = 0.5 V. The findings are obtained  due to the superior electron transportation properties of a DG MOSHEMT structure with compound semiconductor III-V materials.