Superior Peak to Valley Current Ratio of the InAs/Gasb Core-Shell Nanowires for Tunnel Diode Application

Raising transistors density led by scaling is responsible for the increase of the power consumption. Consequently, the supply voltage scaling is a strong issue in recent years. Tunnel diode is considered as one of the potential candidate for low power applications. In this respect, the broken-gap InAs/GaSb heterostructure which has narrow bandgap and small effective mass that increase interband tunneling probability to use to fabricate the core-shell nanowires for low power tunnel diode application. Peak to valley current ratio (PVCR) of negative differential resistance is a property which occurs in tunnel diode to determine the amplification of an AC signal ability. We demonstrate an intensive negative differential resistance phenomenon and PVCR in InAs/GaSb core-shell nanowires device. The tunnel diode characteristics display a higher peak to valley current ratio of 8.69 at VDD= 0.32 V. Among all published literature, our result show a record high PVCR to the author’s best knowledges. InAs/GaSb core-shell nanowires are promising candidate for low power high switching speed application.