High-Performance Thin-Film Transistors Enable By Metal Oxide Semiconductor with Polyaniline Doing in the Channel Layer

Thin-film transistors(TFTs) using metal oxide-based semiconductors have attracted much attention because of their high carrier mobility, excellent optical transparency, low process temperature and solution process. In particular, indium oxide(InO x ) is capable of aqueous routes for environmentally friendly and shows excellent carrier transport due to high carrier concentrations. Despite these advantages, pristine InO x films are generally polycrystalline structures, making it difficult to apply to flexible electronics, and it is necessary to adjust the carrier density to improve stability. Moreover, such a polycrystalline thin film does not exhibit uniform threshold voltage and field-effect mobility, making it difficult to enlarge the device. To address this problems, InO x was doped with inorganic materials such as Ga, Zn, Sn and Sc. Since the thin film transistors using these amorphous metal oxide semiconductor lowers the carrier density, it adversely affects carrier mobility. In order to solve the doping problem of the conventional inorganic material that lowers the carrier mobility, we proposed solution-processed polyaniline doping in the channel layer of metal oxide semiconductors. As a result, depending on the polymer concentration inside the metal oxide semiconductor, the crystallinity of the InO x film decreases and the carrier concentration is controlled, affecting electrical properties such as field-effect mobility, on / off ratio, onset voltage and hysteresis. These results show the possible applicability to the industrial field as well as a significant meaning in improving the properties with polymer doping in the solution-processed metal oxide semiconductor at low temperatures.