Failure Analysis of Bit Line to SNC Leakage Fail in 2x nm DRAM Using Nano-Probing Technique
International Symposium for Testing and Failure AnalysisISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis（2014）
Abstract
Abstract Leakage current from bit line to SNC (Storage Node Contact) is one of the most critical issues in DRAM operation. Such failure becomes more difficult to visualize as the device shrinks. In this study, bit line to SNC leakage fail was analyzed using nano-probing tool in 2xnm DRAM technology.
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Key words
snc leakage failure,nm dram,bit line,nano-probing
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