Fabrication of fluorine-doped tin oxide by using Indonesian local stannic chloride precursors with spin coating method

Abstract Fluorine-doped tin oxide is a thin layer of transparent conductive oxide, which has a function as a semiconductor. Fabrication of fluorine tin oxide from this research was expected to replace indium-doped tin oxide. Indium-doped tin oxide function as a commercial transparent conductive oxide. The raw material of indium was limited, so the price of indium is higher than fluorine. The material used are Indonesia local tin (IV) Chloride, ammonium fluoride, and methanol. Conductive liquids has made by the sol - gel method. Sol gel liquids doped with ammonium fluoride to make a high conductivity. The transmittance value at the 1, 2, 3, 4, and 5 minutes deposition time were respectively 69.7; 43.6; 14.4; 14.1 and 34.7%. In this research, spin coating method under 3000 RPM on fix substrate temperature of 300°C. The results of the experiment shows, increased deposition time, make the thickness of the layer increased while resistivity and transmittance decreased. The optimum parameter for glass conductivity fabrication were obtained at 4 minutes time deposition, substrate temperature at 300°C has a resistivity of 125 k Ω, transmittance 14.1% and band gap energy 2.48 eV.