The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor deposition
Acta Physica Sinica(2009)
摘要
Nonpolar a-plane (1120) GaN has been grown on r-plane (1102) sapphire by metal-orgamic chemical vapor deposition. The crystal quality has been greatly improved by using the AlGaN multiple-quantum-well interlayers. The surface morphology and the crystal quality were investigated by high resolution X-ray diffraction and atomic force microscopy.The triangular pits were eliminated completely. The precession of the X-ray diffraction symmetric reflection peak full with width at half maximum of (1120) is 680″.
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关键词
a-plane,metal-orgamic
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