P‐162: Improvement of Hole Injection in the OLED Devices through Fluorine Plasma

We describe a highly efficient method for improving the hole injection of OLED devices through F plasma treatment. The opto‐electrical property of OLED devices with F treated ITO had nearly identical to conventional OLED devices with p‐doping process. Further, we demonstrate that the migration of F atoms and chemical reaction phenomenon near the interface of HTL improve hole injection and decrease built‐in potential. The OLED devices in this fashion achieve a high reliability and cost‐effectiveness in the various electronic gadgets.