Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga 2 Te 3 Thin Films
physica status solidi (a)（2020）
Abstract
Ovonic Threshold Switching The modulation of ovonic threshold switching (OTS) characteristics is required in a cross-point array structure. Therefore, the effect of Zr doping on the amorphous Ga2Te3 having OTS characteristics is examined. Consequently, the thermal stability of the Zr-doped Ga2Te3 is improved and the threshold and holding voltages are increased with the increasing Zr doping concentration. More details can be found in article number 2000623 by Hyunchul Sohn and co-workers.
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Key words
amorphous ga,threshold switching characteristics,thin films,zr addition
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