High performance photodetectors using porous silicon-TiO₂ heterostructure

Abstract In this study, a feasible approach for UV–vis photodetection using hybrid heterojunction by integrating porous silicon and TiO2 thin film is demonstrated. The photodetector demonstrates excellent photoresponse by three orders of magnitude enhancement and fast rise/decay time constants of 0.16/0.14 ms. Under small bias (1 V), the photodetector exhibits very high responsivity up to 40 A W−1 at 532 nm irradiation over a broadband wavelength range from 300–700 nm. The heterostructure geometry yields high-performance devices useful for many optoelectronic and biomedical applications.