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Technology and modeling of DNTT organic thin-film transistors

Advanced Technologies for Next Generation Integrated Circuits(2020)

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摘要
In this chapter, novel technology and modeling of DNTT-based OTFT is presented by considering field-dependent mobility model and density of states model. Finite element method (FEM)-based device simulation model is able to produce output characteristics in linear and saturation region and transfer characteristics below and above the threshold region of a DNTT-based OTFT. Some important applications, advantages, and disadvantages of OTFTs are also discussed briefly.
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