Performance improvement by template-induced crystallization in ferroelectric HfO<sub>2</sub> tunnel junction memory for cross-point high-density application

S. Kabuyanagi, S. Fujii, K. Usuda, M. Yamaguchi,T. Ino, Y. Nakasaki, R. Takaishi, Y. Kamimuta, M. Saitoh

Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials(2018)

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摘要
2018 International Conference on Solid State Devices and Materials,Performance improvement by template-induced crystallization in ferroelectric HfO2 tunnel junction memory for cross-point high-density application
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tunnel junction memory,ferroelectric hfo<sub>2</sub>,crystallization,template-induced,cross-point,high-density
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