First Principle Band Calculations of Mg2Si Thin Films with (001) and (110) Orientations

5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC-Silicide 2019)(2020)

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摘要
We investigate the surface band structure in Mg2Si thin films using the first principle band structure calculations. When the film is stacked along the [001] direction, surface band structures appear inside quantum confinement band structures originates from the bulk band structure. When the film is stacked along the [110] direction, the semiconductor gap retains while a direct band gap appears.
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thin films
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