In situ thermal behavior of resistance drift in GeTe and Ge₂Sb₂Te₅ nanowires via Raman thermometry

Journal of Materials Chemistry C（2020）

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摘要

The time-dependent resistance drift in GeTe and Ge2Sb2Te5 (GST) nanowires is investigated via Raman thermometry.

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In situ thermal behavior of resistance drift in GeTe and Ge2Sb2Te5 nanowires via Raman thermometry