Acceptor-related terahertz and infrared photoconductivity in p-type GaAs/AlGaAs quantum wells

Abstract Photoconductivity in GaAs/AlGaAs quantum well nanostructures doped with acceptors was studied at low lattice temperatures in the infrared and terahertz spectral ranges. The photocurrent spectra revealed features that can be attributed to the hole transitions from the ground acceptor state to the excited acceptor states and size-quantized subbands.