Мощностные характеристики нитрид-галлиевых СВЧ-транзисторов на подложках кремния

In this study, nitride heterostructures were grown on silicon substrates by metalorganic chemical vapour deposition. Transistors with a 1.32-mm periphery were fabricated based on them. The saturation power of transistors at a frequency of 1 GHz amounted to 4 W and 6.3 W at a supply voltage of 30 V and 60 V, respectively. The maximum drain efficiency was 57%.