Notice of Violation of IEEE Publication Principles: A 220 GHz GaN HEMT Power Amplifier

Notice of Violation of IEEE Publication Principles

"A 220GHz GaN HEMT Power Amplifier"
by Yan Sun, Shaobing Wu, Haiyan Lu, Yuechan Kong, Tangsheng Chen, Zhonghui Li, Qingsheng Zeng
in the Proceedings of the Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall), December 2019, pp. 2978-2981

After careful and considered review of the content and authorship of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE's Publication Principles.

This paper copied content from the papers cited below. The original content was copied without attribution (including appropriate references to the original authors and/or paper titles) and without permission.

"A Beyond 110 GHz GaN Cascode Low-Noise Amplifier with 20.3 dBm Output Power"
by Rainer Weber, Maciej Cwiklinski, Sandrine Wagner, Roger Lozar, Hermann Massler, Peter Bruckner, Rudiger Quay
in the Proceedings of the IEEE/MTT-S International Microwave Symposium (IMS), June 2018, pp. 1499-1502

"190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth"
by Maciej Cwiklinski, Peter Bruckner, Stefano Leone, Christian Friesicke, Roger Lozar, Hermann Massler, Rudiger Quay, and Oliver Ambacher
in the Proceedings of the IEEE/MTT-S International Microwave Symposium (IMS), June 2019, pp. 1257???1260

In this paper, we present the first millimeter-wave GaN HEMT monolithic integrated circuit (MMIC) amplifier with an operating frequency at 220 GHz. This MMIC has a small-signal gain well above 11 dB at 222 GHz. Moreover, the use of gallium nitride technology allows for achieving state-of-the-art saturated output power, up to 14dBm at 222 GHz. To our knowledge, the measured gain and output power levels are the best among any of the GaN MMICs beyond 200 GHz reported to date.