Маска на основе эпитаксиального слоя Si для самокаталитического роста нитевидных нанокристаллов на подложках GaAs (111)B и (100)

GaAs nanowire (NW) self-catalyzed growth on GaAs (111) B and GaAs (100) substrates was carried out by molecular beam epitaxy. A mask for the self-catalyzed NW growth was created by oxidizing an epitaxial silicon layer grown on the GaAs surface by molecular beam epitaxy (MBE). Silicon oxidation was realized in an atmosphere of purified air under normal conditions without moving the structures out from the vacuum system volume of the molecular beam epitaxy chamber. The oxidation process of a silicon layer was studied using single-wave and spectral ellipsometry and the surface morphology of oxidized silicon was studied by atomic force microscopy. Substrates with NWs were studied by scanning electron microscopy. The NW density was demonstrated to be 2.6•107 cm-2 and 3•107 cm-2 for (111)B and (100), respectively.