Semiconductor generator of high voltage nanosecond pulses for plasma technologies

Abstract A generator of nanosecond pulses is discussed in the paper. The main output parameters of the generator are as follows: the maximum output voltage amplitude is 20 kV, the output current strength is 300 A, the maximum frequency is 3 kHz, the output pulse rise time is 4 ns, the output pulse energy is 25 mJ. The generator is based on a current interrupter, which is an assembly of drift step recovery diodes (DSRD). Effective operation of the DSRD is provided by assemblies of IGBT-transistors connected in series, the operating voltage of each assembly is 4 kV. It is shown that the generator can be effectively used for purification of air from organic pollutants and for ignition of car spark-plugs.