Induced crystallographic changes in Cd_1−xZn_xO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5

Maria del Carmen Martínez-Tomás,Adelaida Huerta-Barberà,Saïd Agouram,Vicente Muñoz-Sanjosé

CrystEngComm（2020）

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摘要

HRXRD, SEM and TEM techniques were used to investigate crystallographic characteristics of Cd1−xZnxO films grown by MOCVD on r-plane sapphire in the transition process from the rock-salt to the wurtzite structure.

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Induced crystallographic changes in Cd1−xZnxO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5

Induced crystallographic changes in Cd_1−xZn_xO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5