Люминесцентные свойства выращенных на InP слоев GaInAsP с градиентом состава по толщине

The photoluminescent properties at 77 and 300 K are investigated for Ga1 xInxAsyP1 y epilayers with V-group elements content gradient Δy up to 0.08 across whole thickness (about 1 µm). Ga1 xInxAsyP1 y layers with high Δy values have widened photoluminescence spectra. For GaInAsP layers of low crystaline perfection, photoluminescence was either absent or manifested itself as it is typical for transitions involving impurity levels.