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Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor

Guanjie Li,Xiaomin Li,Qiuxiang Zhu,Junliang Zhao,Xiangdong Gao

CrystEngComm（2019）

Cited 6|Views5
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Abstract
High quality BaTiO3/CoFe2O4 multiferroic heterostructure directly integrated on GaN semiconductor platform displayed good ferroelectric and magnetic properties.
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