(Invited) Negative Capacitance III-V FinFETs for Ultra-Low-Power Applications

Owing to its superior carrier transport, InxGa1-xAs materials are considered as the potential n-channels to replace Si for future CMOS technologies beyond the 7-nm technology node. Negative capacitance (NC) FETs with steep SS characteristics are extensively studied to lower the supply voltage (Vdd) for ultra-low-power applications. NC effects can be realized by using ferroelectric (FE) materials in the dielectric gate stack. Among the variety of FE materials, hafnium zirconium oxide (HfZrOx-HZO), which can be employed by atomic layer deposition (ALD) technique, is well-known as the most CMOS-compatible material. There have been various reports that show steep switching behaviors by applying HZO materials on both Si and Ge channels. Recently, NC InGaAs MOSFETs with FE HZO have been presented for steep subthreshold slope (SS) behaviors. However, NC effects have not been presented for nonplanar InGaAs FinFETs yet. In this work, we demonstrate NC In0.53Ga0.47As FinFETs with ferroelectric FE HZO as gate dielectric, exhibiting bi-directional sub-60 mV/dec (SS) at room temperature, for the first time. We show minimum SSrev of 23 and SSfor of 34 mV/dec on InGaAs NC FinFETs with 5 nm HZO thin film. III-V NC FinFETs with HZO FE materials can be very promising for extremely high performance and ultra-low-power CMOS applications.