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P‐4: High‐Mobility Back‐Channel‐Etched IGZTO‐TFT and Application to Dual‐Gate Structure

Mitsuru Nakata,Mototaka Ochi,Tatsuya Takei,Hiroshi Tsuji,Masashi Miyakawa,Genichi Motomura,Hiroshi Goto,Yoshihide Fujisaki

SID Symposium Digest of Technical Papers（2019）

Cited 12|Views0
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Abstract
This work developed a back‐channel‐etched In‐Ga‐Zn‐Sn‐O (IGZTO) thin‐film transistor (TFT) with a high mobility of 41 cm 2 /Vs by optimizing both the IGZTO composition and the fabrication process. Furthermore, an effective mobility of 99 cm 2 /Vs was achieved for an IGZTO‐TFT with a dual‐gate structure.
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