A bi-layer buffer system AlN/Al_1−xIn_xN to enable the growth of high crystal quality Al_0.36In_0.64N thin films on Si (111)

Wei Lu,Xiaoyi Wang,Yongjun Ma,Salvatore Grasso,Ming Xu

CrystEngComm（2019）

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摘要

We report a unique AlN/AlInN bi-layer buffer design to enable the growth of textured c-axis wurtzite Al0.36In0.64N epilayer on a Si (111) substrate, which creates the possibility to grow high crystal quality Al0.36In0.64N.

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A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)

A bi-layer buffer system AlN/Al_1−xIn_xN to enable the growth of high crystal quality Al_0.36In_0.64N thin films on Si (111)