Destruction of LED heterostructures under high-current electron beam irradiation

This paper presents the experimental results of the fracture morphology of InGaN / GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage - microspheres, ∼1-5 μm was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space.