Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS₂/GaN and β-In₂Se₃/GaN

Semiconductor Science and Technology（2019）

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Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and β-In2Se3/GaN