High mobility (>30 cm2 V−1 s−1) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μm−1 off-state leakage currentNobuyoshi Saito,Tomoaki Sawabe,Junji Kataoka,Tomomasa Ueda,Tsutomu Tezuka,Keiji IkedaJapanese Journal of Applied Physics（2019）引用 5|浏览0暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
