P‐1.3: The conductivity modulation of amorphous zinc tin oxide thin film by Ar plasma treatment

We propose a method to form low‐resistance amorphous zinc tin oxide thin film (a‐ZTO) by Ar plasma. The results show that the Ar plasma treatment can effectively decrease the resistivity of the a‐ZTO. The ZTO film treated with Ar plasma at suitable time and moderate operating power, exhibits a low sheet resistance of 2.3 kΩ/□. With the help of PECVD‐SiOx coverage layer, the sheet resistance of Ar‐plasam treated ZTO is enhanced and increases only one order of magnitude after annealing at 230 °C. As a result, an optimized Ar plasma treatment for fabrication of low‐resistance a‐ZTO film is presented.