1.06 μm wavelength photodetectors with metamorphic buffer layers grown on GaAs substrates

The result of investigation of InGaAs photodetectors grown on GaAs substrate with metamorphic InGaP buffer is shown in this paper. It has been shown experimentally that the use of the gradient InGaP metamorphic layer in an InGaAs photodiode structure improves the spectral characteristics and crystalline quality of the structure and leads to reduction of dark current by an order of magnitude compared to photodiodes fabricated with metamorphic InGaAs layers.