Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (&gt;12MeV) of Al<sup>+</sup> and B<sup>+</sup>
Materials Science Forum（2018）
Abstract
In this work, >2kV PiN diodes with >10um deep implant of B+ and 6um deep implant of Al+ have been fabricated to evaluate the quality of resulting pn junction after high-energy implantation. Acceptable low leakage currents at reverse bias and stable avalanche breakdown were observed for high energy implanted diodes (HEI-diodes) when compared to No-HEI-diodes that suggests minimal defect sites present after activation anneal.
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Key words
high energy implantation,h-sic
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