50-3: Formation of Source and Drain Regions in Top-Gate Self-Aligned Oxide Semiconductor Field-Effect Transistor

Formation of source and drain regions in a top‐gate self‐aligned field‐effect transistor and its mechanism were examined. A stack structure of silicon nitride and an oxide semiconductor (OS) is effective, and hydrogen trapped in oxygen vacancies in the OS and the presence of metallic indium at the interface are important.