P-111: Black Photoresist Bank for Inkjet-Printed Quantum Dot Light-Emitting Diodes
SID Symposium Digest of Technical Papers(2018)
Abstract
We demonstrated a bank structure for inkjet‐printed quantum dot light‐emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B‐PR). The B‐PR banks have low surface energy (13 mJ m −2 ), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B‐PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.
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Key words
black photoresist bank,diodes,inkjet-printed,light-emitting
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