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P-111: Black Photoresist Bank for Inkjet-Printed Quantum Dot Light-Emitting Diodes

Donghyun Ko,Jongseok Han,Heebum Roh,Yeseul Park, Jiwon Lee, Juho Kim, Hunsik Kim, Hyungjoo Kim, Jongsoo Lee,Wan Ki Bae,Changhee Lee

SID Symposium Digest of Technical Papers（2018）

Cited 4|Views3
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Abstract
We demonstrated a bank structure for inkjet‐printed quantum dot light‐emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B‐PR). The B‐PR banks have low surface energy (13 mJ m −2 ), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B‐PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.
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Key words
black photoresist bank,diodes,inkjet-printed,light-emitting
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